Ohzone, T. : rechercher sur Z-Library

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1

A self-aligned retrograde twin-well structure with buried p+ -layer

Odanaka, S., Yabu, T., Shimizu, N., Umimoto, H., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1990

Langue:

english

Fichier:

PDF, 750 KB

english, 1990

2

Multiband simulation of quantum transport in nanoscale double-gate MOSFETs

Hideyuki Iwata, Toshihiro Matsuda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 441 KB

english, 2009

3

Numerical analysis of temperature dependence of very-short-pulse-induced dynamic latchup in CMOS

Hideyuki Iwata, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 606 KB

english, 1997

4

Numerical solar cell simulation including multiple diffused reflection at the rear surface

H. Iwata, T. Ohzone

Journal:

Solar Energy Materials and Solar Cells

Année:

2000

Langue:

english

Fichier:

PDF, 210 KB

english, 2000

5

Computationally efficient method for scattering device simulation in nanoscale MOSFETs

Hideyuki Iwata, Toshihiro Matsuda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 552 KB

english, 2007

6

Transient latchup characteristics in n-well CMOS

Ohzone, T., Iwata, J.

Journal:

IEEE Transactions on Electron Devices

Année:

1992

Langue:

english

Fichier:

PDF, 653 KB

english, 1992

7

Nonuniform reverse-breakdown characteristics of n+-diodes fabricated by LOCOS and trench isolation

Ohzone, T., Iwata, H.

Journal:

IEEE Transactions on Electron Devices

Année:

1994

Langue:

english

Fichier:

PDF, 390 KB

english, 1994

8

Electrical characteristics of scaled CMOSFET's with source/drain regions fabricated by 7° and 0° tilt-angle implantations

Ohzone, T., Yamamoto, M., Iwata, H., Odanaka, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 746 KB

english, 1995

9

Numerical simulation of single event latchup in the temperature range of 77-450 K

Iwata, H., Ohzone, T.

Journal:

IEEE Transactions on Nuclear Science

Année:

1995

Langue:

english

Fichier:

PDF, 647 KB

english, 1995

10

The dynamics of latchup turn-on behavior in scaled CMOS

Odanaka, S., Wakabayashi, M., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1985

Langue:

english

Fichier:

PDF, 640 KB

english, 1985

11

[IEEE 2008 IEEE International Conference on Microelectronic Test Structure (ICMTS) - Edinburgh, UK (2008.03.24-2008.03.27)] 2008 IEEE International Conference on Microelectronic Test Structures - A test structure for channel length engineering of NAND gates in standard cell library

Matsuda, T., Sugiyama, Y., Takakuwa, J., Iwata, H., Ohzone, T.

Année:

2008

Langue:

english

Fichier:

PDF, 344 KB

english, 2008

12

[IEEE International Conference on Microelectronic Test Structures - Trento, Italy (25-28 March 1996)] Proceedings of International Conference on Microelectronic Test Structures - Asymmetry and mismatch in CMOSFETs with source/drain regions fabricated by various ion-implantation methods

Ohzone, T., Miyakawa, T., Yabu, T., Odanaka, S.

Année:

1996

Langue:

english

Fichier:

PDF, 691 KB

english, 1996

13

A planarization technology using a bias-deposited dielectric film and an etch-back process

Fujii, S., Fukumoto, M., Fuse, G., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1988

Langue:

english

Fichier:

PDF, 621 KB

english, 1988

14

[IEEE ICMTS 92 1992 International Conference on Microelectronic Test Structures - San Diego, CA, USA (16-19 March 1992)] ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures - Three-dimensional effects of latchup turn-on CMOS and forward-biased n/sup +/-diode measured by photoemission

Ohzone, T., Iwata, H.

Année:

1992

Langue:

english

Fichier:

PDF, 805 KB

english, 1992

15

Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

H. Iwata, T. Matsuda, T. Ohzone

Année:

2002

Langue:

english

Fichier:

PDF, 431 KB

english, 2002

16

Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperatures

Iwata, Hideyuki, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

1996

Fichier:

PDF, 288 KB

1996

17

Analysis of Temperature Distribution in Stacked IC With On-Chip Sensing Device Arrays

Matsuda, Toshihiro, Yamada, Keita, Demachi, Haruka, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ishizuka, Masaru, Ohzone, Takashi

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2015

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2015

18

Analysis of Metal Wire Effect on Temperature Distribution in Stacked IC with Thinned Chip

Matsuda, Toshihiro, Demachi, Haruka, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ohzone, Takashi

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2017

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2017

19

Parasitic current characteristics of a MOSFET with a Si-implanted gate-SiO2

T Ohzone, A Michii, T Hori

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 610 KB

english, 1995

20

Photon-energy distribution of hot-carrier photoemission from LOCOS and trench-isolated MOSFETs

Takashi Ohzone, Hideyuki Iwata, Yukiharu Uraoka, Shinji Odanaka

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 771 KB

english, 1994

21

A MOSFET with Si-implanted gate-SiO2 structure for analog-storage EEPROm applications

Takashi Ohzone, Takashi Hori

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 321 KB

english, 1994

22

Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Takashi Ohzone, Takashi Hori

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 495 KB

english, 1996

23

Blue electroluminescence from MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Kiyoshi Nishihara, Masaharu Kawabe, Hideyuki Iwata, Satoshi Iwatsubo, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 451 KB

english, 2004

24

Electroluminescence of MOS capacitors with Si-implanted SiO2

T Matsuda, M Nishio, T Ohzone, H Hori

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 692 KB

english, 1997

25

Direct-current and alternating-current electroluminescence of MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Yasuhiro Honda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 546 KB

english, 1998

26

Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2

Etsumasa Kameda, Toshihiro Matsuda, Yoshiko Emura, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 494 KB

english, 1998

27

Study of the current–voltage characteristics in MOS capacitors with Si-implanted gate oxide

Etsumasa Kameda, Toshihiro Matsuda, Yoshiko Emura, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 393 KB

english, 1999

28

Interface state density in n-MOSFETs with Si-implanted gate oxide measured by subthreshold slope analysis

Etsumasa Kameda, Toshihiro Matsuda, Masahiro Yasuda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 352 KB

english, 1999

29

A time-dependent and two-dimensional device analysis of CMOS structures

Shinji Odanaka, Mutsuko Wakabayashi, Takashi Ohzone, Toyoki Takemoto

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1985

Langue:

english

Fichier:

PDF, 539 KB

english, 1985

30

Improvement of asymmetrical characteristics in submicron CMOS devices

Toshiki Yabu, Kazumi Kurimoto, Hiroyuki Yamauchi, Masanori Fukumoto, Takashi Ohzone

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1990

Langue:

english

Fichier:

PDF, 568 KB

english, 1990

31

Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices

Iwata, H., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1992

Langue:

english

Fichier:

PDF, 618 KB

english, 1992

32

Erase/write cycle tests of n-MOSFETs with Si-implanted gate-SiO2

Ohzone, T., Matsuda, T., Hori, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1996

Langue:

english

Fichier:

PDF, 794 KB

english, 1996

33

Influence of asymmetric/symmetric source/drain region on asymmetry and mismatch of CMOSFET's and circuit performance

Ohzone, T., Miyakawa, T., Matsuda, T., Yabu, T., Odanaka, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1998

Langue:

english

Fichier:

PDF, 345 KB

english, 1998

34

Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods

Matsuda, T., Okina, M., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1999

Langue:

english

Fichier:

PDF, 370 KB

english, 1999

35

Titanium silicide interconnect technology for submicrometer DRAMs

Fukumoto, M., Yoshida, T., Tateiwa, K., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1988

Langue:

english

Fichier:

PDF, 551 KB

english, 1988

36

Silicon-gate n-well CMOS process by full ion-implantation technology

Ohzone, T., Shimura, H., Tsuji, K., Hirao, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1980

Langue:

english

Fichier:

PDF, 675 KB

english, 1980

37

Ion-implanted thin polycrystalline-silicon high-value resistors for high-density poly-load static RAM applications

Ohzone, T., Fukumoto, M., Fuse, G., Shinohara, A., Odanaka, S., Sasago, M.

Journal:

IEEE Transactions on Electron Devices

Année:

1985

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1985

38

A new half-micrometer p-channel MOSFET with efficient punchthrough stops

Odanaka, S., Fukumoto, M., Fuse, G., Sasago, M., Yabu, T., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 635 KB

english, 1986

39

A new isolation method with boron-implanted sidewalls for controlling narrow-width effect

Fuse, G., Fukumoto, M., Shinohara, A., Odanaka, S., Sasago, M., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1987

Langue:

english

Fichier:

PDF, 809 KB

english, 1987

40

Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs

Iwata, H., Matsuda, T., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 294 KB

english, 2005

41

In Vitro P-Glycoprotein Interactions and Steady-State Pharmacokinetic Interactions Between Tolvaptan and Digoxin in Healthy Subjects

Shoaf, Susan E., Ohzone, Yoshihiro, Ninomiya, Shin-ichi, Furukawa, Masayuki, Bricmont, Patricia, Kashiyama, Eiji, Mallikaarjun, Suresh

Journal:

Journal of Clinical Pharmacology

Année:

2011

Langue:

english

Fichier:

PDF, 254 KB

english, 2011

42

[IEEE 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) - Waikoloa, HI, USA (5-9 Dec. 1994)] Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) - Numerical analysis of silicon-on-insulator thin-film solar cells

Iwata, H., Ohzone, T., Takakura, H.

Année:

1994

Langue:

english

Fichier:

PDF, 337 KB

english, 1994

43

A 2Kx8-bit static MOS RAM with a new memory cell structure

Ohzone, T., Hirao, T., Tsuji, K., Horiuchi, S., Takayanagi, S.

Journal:

IEEE Journal of Solid-State Circuits

Année:

1980

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1980

44

An 8Kx8 bit static MOS RAM fabricated by n-MOS/n-well CMOS technology

Ohzone, T., Yasui, T.J., Ishihara, T., Horiuchi, S.

Journal:

IEEE Journal of Solid-State Circuits

Année:

1980

Langue:

english

Fichier:

PDF, 1.49 MB

english, 1980

45

[IEEE ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures - Monterey, CA, USA (13-16 March 2000)] ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) - A study on hot-carrier-induced photoemission in n-MOSFETs under dynamic operation

Ohzone, T., Yuzaki, M., Matsuda, T., Kameda, E.

Année:

2000

Langue:

english

Fichier:

PDF, 453 KB

english, 2000

46

[IEEE ICMTS 92 1992 International Conference on Microelectronic Test Structures - San Diego, CA, USA (16-19 March 1992)] ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures - Two-dimensional current/voltage measurements of reverse-biased n/sup +/-diodes by photoemission

Ohzone, T., Iwata, H.

Année:

1992

Langue:

english

Fichier:

PDF, 578 KB

english, 1992

47

[IEEE ICMTS 93 1993 International Conference on Microelectronic Test Structures - Sitges, Spain (22-25 March 1993)] ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures - Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission

Ohzone, T., Iwata, H.

Année:

1992

Langue:

english

Fichier:

PDF, 474 KB

english, 1992

48

[IEEE 2007 IEEE International Conference on Microelectronic Test Structures - Bunkyo-ku, Japan (2007.03.19-2007.03.22)] 2007 IEEE International Conference on Microelectronic Test Structures - A Test Structure for Analysis of Asymmetry and Orientation Dependence of MOSFETs

Matsuda, T., Sugiyama, Y., Nohara, K., Morita, K., Iwata, H., Ohzone, T., Morishita, T., Komoku, K.

Année:

2007

Langue:

english

Fichier:

PDF, 3.71 MB

english, 2007

49

[IEEE 2014 International Conference on Microelectronic Test Structures (ICMTS) - Udine, Italy (2014.3.24-2014.3.27)] 2014 International Conference on Microelectronic Test Structures (ICMTS) - A test structure for analysis of temperature distribution in stacked IC with sensing device array

Matsuda, Toshihiro, Yamada, Keita, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ishizuka, Masaru, Ohzone, Takashi

Année:

2014

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2014

50

[IEEE ICMTS 1998. International Conference on Microelectronic Test Structures - Kanazawa, Japan (23-26 March 1998)] ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157) - An analysis of hot-carrier-induced photoemission profiles in n-MOSFETs

Ohzone, T., Matsuyama, N., Hosoi, N., Matsuda, T.

Année:

1998

Langue:

english

Fichier:

PDF, 602 KB

english, 1998